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| HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Q1: l l l High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Unit in mm Q2: l l l High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) JEDEC EIAJ TOSHIBA Weight: 0.015g 2-3N1A Q1 Maximum Ratings (Ta = 25C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating -50 -50 -5 -150 -50 Unit V V V mA mA Marking 000707EAA2 * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. 2001-02-07 1/5 HN1B01F Q2 Maximum Ratings (Ta = 25C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 60 50 5 150 30 Unit V V V mA mA Equivalent Circuit (Top View) Q1,Q2 Common Maximum Ratings (Ta = 25C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol P C* Tj Tstg Rating 200 125 -55~125 Unit mW C C *: Total rating Q1 Electrical Characteristics (Ta = 25C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Circuit Test Condition VCB = -50V, IE = 0 VEB = -5V, IC = 0 VCE = -6V, IC = -2mA IC = -100mA, IB = -10mA VCE = -10V, IC = -1mA VCB = -10V, IE = 0, f = 1MHz Min 120 Typ. -0.1 120 4 Max -0.1 -0.1 400 -0.3 V MHz pF Unit A A Q2 Electrical Characteristics (Ta = 25C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Circuit Test Condition VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 6V, IC = 2mA IC = 100mA, IB = 10mA VCE = 10V, IC = 1mA VCB = 10V, IE = 0, f = 1MHz Min 120 Typ. 0.1 150 2 Max 0.1 0.1 400 0.25 V MHz pF Unit A A Note: hFE Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol 000707EAA2 * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2001-02-07 2/5 HN1B01F Q1 (PNP Transistor) 2001-02-07 3/5 HN1B01F Q2 (NPN Transistor) 2001-02-07 4/5 HN1B01F (Q1, Q2 Common) 2001-02-07 5/5 |
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